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10204 4NM60 LBN11530 2N337 M3485 2010U 477M00 OMD100
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  Datasheet File OCR Text:
 SHENZHEN ICHN ELECTRONICS TECH. CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT 23
1. BASE
9012LT1
FEATURES
TRANSISTOR PNP (c)
2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W Tamb=25ae(c) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae unless otherwise specified(c)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50m A IC=-500 mA, IB= -50m A VCE=-6V, I = -20mA C 150 40 Test conditions MIN -40 -25 -5 TYP
Unit : mm
MAX
UNIT V V V
Ic= -100|I A IE=0 Ic= -1mAIB=0 IE=-100|I AIC=0 VCB=-40 V , IE=0 VCE=-20V , IB=0 VEB= -5V , IC=0
-0.1 -0.1 -0.1 120 350
|I A |I A |I A
VCE=-1V, IC= -50m A
-0.6 -1.2
V V MHz
fT
f=30MHz
CLASSIFICATION OF h FE(1) Rank Range
L 120- 200
H 200- 350
DEVICE MARKING: 9012LT1=2T1
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